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| AO4824 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. Standard Product AO4824 is Pb-free (meets ROHS & Sony 259 specifications). AO4824L is a Green Product ordering option. AO4824 and AO4824L are electrically identical. Features Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17m RDS(ON) < 27m Q2 VDS(V) = 30V ID=9.8A (VGS = 10V) <13m (VGS = 10V) <15m (VGS = 4.5V) D1 D2 SOIC-8 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 S1 G2 S2 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C Current A ID TA=70C Pulsed Drain Current B IDM TA=25C TA=70C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET Q1 t 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient Maximum Junction-to-Lead C Max Q1 30 20 8.5 6.8 30 2 1.28 -55 to 150 Typ 48 74 35 Max Q2 30 12 9.8 7.8 40 2 1.28 -55 to 150 Max 62.5 110 40 Units V V A PD TJ, TSTG Symbol RJA RJL Symbol RJA RJL W C Units C/W Steady-State Parameter: Thermal Characteristics MOSFET Q2 t 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Typ 48 74 35 Max 62.5 110 40 Units C/W Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. AO4824 Q1 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions 30 ID=250A, VGS=0V VDS=24V, VGS=0V VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=8.5A TJ=125C 0.003 TJ=55C 1 30 13.8 20 21 23 0.76 17 25 27 1 3 1250 1.8 1 5 100 3 V A nA V A m m S V A pF pF pF nC nC nC nC 7.5 6.5 25 5 21 10 ns ns ns ns ns nC Min Typ Max Units RDS(ON) gFS VSD IS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1040 180 110 0.7 19.2 9.36 0.85 23 11.2 SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=10V, VDS=15V, ID=8.5A 2.6 4.2 5.2 4.4 17.3 3.3 16.7 6.7 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/s 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4824 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 26 VGS=4.5V Normalized On-Resistance 24 22 RDS(ON) (m) 20 18 16 14 12 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 1.0E+01 1.0E+00 40 RDS(ON) (m) ID=8.5A IS (A) 1.0E-01 125C 1.0E-02 25C 1.0E-03 20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics VGS=10V 1.6 VGS=10V 1.4 ID=8.5A VGS=4.5V 1.2 4V 10V 4.5V 3.5V 12 ID(A) 125C 8 VGS=3V 4 20 16 VDS=5V 13.4 22 0 1.5 2 2.5 25C 16 26 0.76 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 30 125C Alpha & Omega Semiconductor, Ltd. AO4824 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=8.5A Capacitance (pF) 1250 Ciss 1000 750 500 250 0 0 Crss 5 10 Coss 13.4 22 15 0.76 20 16 26 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 1ms 10ms 0.1s 100s 10s Power (W) 50 40 30 20 10 0 0.001 TJ(Max)=150C TA=25C ID (Amps) 10.0 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 1s 10s DC 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4824 Q2 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=9.8A TJ=125C 30 0.6 40 1.1 10.5 13.4 12 37 0.73 Min 30 0.004 1 5 100 2 13 17 15 1 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=9A Forward Transconductance VDS=5V, ID=9.8A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3656 4250 256 168 0.86 30.5 4.5 8.5 5.5 1.05 36 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time VGS=4.5V, VDS=15V, ID=9.8A 8.2 5 75 8.5 26 15 Turn-Off DelayTime Turn-Off Fall Time IF=9.8A, dI/dt=100A/s Body Diode Reverse Recovery time Body Diode Reverse Recovery charge IF=9.8A, dI/dt=100A/s 2 VGS=10V, VDS=15V, RL=1.6, RGEN=3 3.1 52.4 5.7 21.5 11 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4824 Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 30 ID (A) 4.5V 2.5V 20 VGS=2V 10 ID(A) 30 25 20 15 125C 10 5 VDS=5V 25C 0.5 1 1.5 2 2.5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 VGS (Volts) Figure 2: Transfer Characteristics 13 VGS=4.5V Normalized On-Resistance 1.8 ID=9.8A 1.6 VGS=4.5V 1.4 VGS=10V 1.2 1 0.8 0 50 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature 12 RDS(ON) (m) 11 VGS=10V 10 9 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 RDS(ON) (m) 20 15 10 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage ID=9.8A 1.0E+01 1.0E+00 1.0E-01 IS (A) 125C 25C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C Alpha & Omega Semiconductor, Ltd. AO4824 Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 100 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 10000 VDS=15V ID=9.8A Capacitance (pF) Ciss f=1MHz VGS=0V 1000 Coss 100.0 RDS(ON) limited 10.0 ID (A) TJ(Max)=150C, TA=25C 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 100s 10s Power (W) 40 TJ(Max)=150C TA=25C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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